Low-dimensional Nanoelectronics Dr. Kuntal Roy kuntal[AT]iiserb.ac.in Carbon is an wonderful material that can form both two-dimensional structures (Graphene) and one-dimensional structures (carbon nanotube), which are promising candidates for electronics. While carbon nanotube field-effect transistors (CNT FETs) are being manufactured commercially for nanoelectronics, the (re)discovery of Graphene [the 2010 Nobel Prize in Physics, Geim and Novoselov] has gained world-wide endeavours for building electronics. However, Graphene is inherently a zero-bandgap semiconductor (OFF state leakage would be high), but its high speed of operation makes it suitable for applications in communications and RF electronics. The emergence of two-dimensional van der waals materials and transitional metal dichalcogenides (e.g., MoS2, WS2) with energy band gaps have stimulated a lot of interests in the community for technological applications. Also, black phosphorus has recently joined the family. While the multilayers of semiconducting dichalcogenides possess an indirect bandgap (unlike the monolayer case), the bandgaps of black phosphorus is direct for all thicknesses and this is a benefit for optoelectronic applications. For transistor applications, the ON/OFF ratio, subthreshold swing, short-channel effects, mobility degradation at low thicknesses are important technological challenges.